[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[8a-E218-8] Evaluation of Photoluminescence Spectra and Carrier Lifetimes in InGaN/GaN Quantum Dots by Temperature-Dependent Time-Resolved Photoluminescence

〇Riku Iwasaki¹, Yuto Nakama¹, Koshiro Arai¹, Katsuki Sato¹, Yuta Nakayama¹, Atsushi Tackeuchi¹, Ying Gong², Wenxian Yang², Shulong Lu² (1.Waseda Univ., 2.SINANO)

Keywords:

InGaN quantum dots,semiconductor,photoluminescence

Temperature-dependent time-resolved photoluminescence (TRPL) measurements were performed on self-assembled InGaN/GaN quantum dots grown by the Stranski–Krastanov mode in the temperature range of 10–300 K. With increasing temperature, broadening of the PL spectra, non-monotonic shifts in the emission peak energy, and changes in the amplitude ratio of the fast and slow decay components obtained from biexponential fitting were observed.