[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-E218-9] Effect of the Number of Stacked Layers on the Time-Resolved Photoluminescence Properties of Green-Emitting InGaN/GaN Quantum Dots

〇Koshiro Arai¹, Yuto Nakama¹, Riku Iwasaki¹, Alexander Zades¹, Katsuki Sato¹, Yuta Nakayama¹, Atsushi Tackeuchi¹, Gong Ying², Yang Wenxian², Lu Shulong² (1.Waseda Univ., 2.SINANO)

Keywords:

Quantum dots,Semiconductor,Time-resolved photoluminescence

This study investigates the effect of the number of stacked layers on the time-resolved photoluminescence (TRPL) properties of green-emitting InGaN/GaN quantum dots. Samples with 3, 5, and 10 stacked quantum-dot layers were measured under different temperatures and excitation conditions. The PL intensity increased markedly with the number of layers, and the 10-layer sample showed suppressed FWHM broadening with increasing temperature. Double-exponential fitting of the TRPL decay revealed that both fast and slow decay components became longer in the 10-layer sample, suggesting that sufficient stacking improves emission properties and contributes to longer carrier lifetimes.