[8a-N101-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N101-1] Excitation Power Dependence of Time-Resolved Photoluminescence in Green-Emitting InGaN/GaN Quantum Dots

〇Yuto Nakama¹, Riku Iwasaki¹, Katsuki Sato¹, Koshiro Arai¹, Yuta Nakayama¹, Atsushi Tackeuchi¹, Ying Gong², Wenxian Yang², Shulong Lu² (1.Waseda Univ., 2.SINANO)

Keywords:

InGaN quantum dots,Time-resolved photoluminescence,Excitaation power dependence

In this study, time-resolved photoluminescence (TRPL) measurements of InGaN/GaN quantum dots fabricated by plasma-assisted molecular beam epitaxy were performed at low temperatures. The excitation power was varied from 16 μW to 2.25 mW, and the excitation-power dependences of the emission spectra and PL decay times were investigated. As a result, an increase in the contribution of the long-lifetime emission component and a shortening of the decay time of the short-lifetime component were observed with increasing excitation power. These results demonstrate that the emission characteristics of InGaN/GaN quantum dots strongly depend on the excitation power.