Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N101-10]Carrier Diffusion Measurement in InGaN QWs Using TRPL Measurements with a Confocal System

〇Yuta Sakurai¹, Osuke Ito¹, Atsushi A. Yamaguchi¹, Rintaro Koda² (1.Kanazawa Inst. Tech., 2.Sony Semiconductor Solutions Corp.)

Keywords:

InGaN quantum well,Time-Resolved Photoluminescence (TRPL) Measurement,Carrier Diffusion

Carrier diffusion in InGaN quantum wells (QWs) is strongly influenced by potential fluctuations and high threading dislocation densities, making its accurate evaluation challenging. In this study, the carrier diffusion coefficient was evaluated using time-resolved photoluminescence (TRPL) measurements with a confocal optical system. The diffusion coefficient was determined by analyzing the dependence of the PL lifetime on the observation area size, and its excitation power density dependence was investigated. The obtained results were generally consistent with those reported in previous studies, demonstrating the effectiveness of the proposed method for evaluating carrier diffusion in InGaN QWs.

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