[8a-N101-1~11] 15.4 III-V-group nitride crystals

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-N101-11] Spatial Luminescence Characterization of InGaN SQW and Underlayer-Inserted SQW Using Cathodoluminescence Spectral Imaging II

〇(M2)Daichi Tsujii¹, Ryunosuke Fuku¹, Zentaro Akase¹, Kazunori Iwamitsu¹, Shigetaka Tomiya¹ (1.NAIST)

Keywords:

Cathodoluminescence Spectral Imaging,Spatial Luminescence Characterization,Quantum Well

In micro-LEDs, the influence of nonradiative recombination originating from sidewall etching damage becomes increasingly significant as the chip size decreases. Therefore, precise evaluation of the carrier diffusion length, which strongly affects the emission efficiency, is essential. In this study, cathodoluminescence spectral imaging (CL-SI) measurements were performed on an InGaN single quantum well (SQW) and an underlayer-inserted SQW (SQW-UL), and the emission intensity distributions around dark spots were comparatively analyzed. The results indicate that, around the investigated dark spot, a longer effective carrier diffusion length tended to be observed on the longer-wavelength side.