[8a-N101-1~11] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-N101-4] Excitation-Intensity Dependence of Emission Characteristics in InGaN MQW Nanostripe Structures

〇Seiichi Kataoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research inst.)

Keywords:

nanostructure

We evaluated the PL characteristics of InGaN nanostripe structures fabricated via the HEATE method over a wide range of excitation intensities to clarify their emission enhancement mechanism. In the low-excitation regime, the nanostripe region exhibited a blueshift and a maximum 80-fold emission enhancement compared to the unpatterned area, driven by strain relaxation and suppressed non-radiative recombination. Conversely, in the high-excitation regime, this enhancement vanished owing to the saturation of non-radiative recombination centers and the screening of the piezoelectric effect. This demonstrates that nanofabrication effects are particularly pronounced in the low carrier density regime.