Presentation Information

[8a-N101-7]PL Lifetime spectral mapping measurement for InGaN quantum wells

〇Soma Hatanaka1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)

Keywords:

mapping measurement,photoluminescence lifetime,career dynamics

Time-resolved photoluminescence (TRPL) mapping measurements were performed on InGaN single quantum wells, and spatial correlations among the PL peak intensity, PL peak energy, and PL lifetime were analyzed. Within each sample, the PL lifetime decreased exponentially with increasing PL peak energy, while the PL intensity remained nearly constant. These results suggest that the spatial variation in emission energy reflects the statistical distribution of localized states. In contrast, comparison among different samples revealed that the PL intensity decreased with increasing indium composition, suggesting the influence of defects and the quantum-confined Stark effect (QCSE).