Presentation Information
[8a-N101-8]Investigation of the Factors Governing PL Decay Curves in InGaN Quantum Wells
〇Arata Suzaki1, Itsuki Shimbo1, Atsushi A. Yamaguchi1, Kazunori Iwamitsu2, Shigetaka Tomiya2 (1.Kanazawa Inst. Tech., 2.NAIST)
Keywords:
InGaN Quantum Wells,Carrier dynamics,time-resolved PL measurements
Optical devices based on InGaN quantum wells (QWs) face two major challenges: the green-gap problem, in which the emission efficiency decreases on the longer-wavelength side of the green region, and the efficiency droop, in which the efficiency decreases with increasing injection current. Elucidating the fundamental origins of these phenomena requires a comprehensive understanding of carrier dynamics. In this study, we focus on the photoluminescence (PL) decay curves obtained from time-resolved PL measurements and examine whether the decay behavior can be described by a single-variable model, dn/dt= f(n), governed solely by the carrier density n. To this end, decay curves measured under various excitation powers are overlaid after shifting along the time axis. By clarifying the conditions under which the overlaid curves coincide and those under which they deviate, we aim to elucidate the essential functional form—namely, the carrier rate equation—that governs the PL decay curves.