Presentation Information
[8a-PA3-4]An Exposure Apparatus for Projecting Aberration-Correcting Patterns onto Curved Multilayer Mirror Substrates
〇(B)Sera Sakamoto1, Lucas Prevotel2, Eirini Papagiannouli2, Mitsunori Toyoda1 (1.Tokyo Polytechnic Univ., 2.Institut d'Optique.)
Keywords:
Extreme Ultraviolet,Mo/Si multilayer mirror,Lithography
To achieve diffraction-limited imaging in EUV microscopy, we have developed a novel wavefront correction method that locally etches the topmost layer of a curved Mo/Si multilayer mirror with 10-pm accuracy. In this presentation, we report a single-exposure lithography system designed to generate an etching area-defining resist mask on a concave mirror. By combining an i-line maskless exposure tool with an original optical system consisting of a Keplerian afocal system and an objective lens, we achieved independent control of focal length and field curvature, enabling pattern projection onto the concave surface with a spatial resolution of 50 µm.