[8p-A21-1~18] 6.4 Thin films and New materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-A21-12] Dependence of Protonation-Induced Thermal Conductivity Switching Range on Mosaicity in Epitaxial LaNiO₃ Thin Films on Si Substrates

〇Haruka Zaizen¹, Haobo Li^1,2, Osamu Nakagawara³, Ahrong Jeong⁴, Hiromichi Ohta⁴, Hidekazu Tanaka^1,2 (1.SANKEN, The Univ. of Osaka, 2.OTRI, 3.I-PEX Piezo Solutions Inc, 4.RIES, Univ. of Hokkaido)

Keywords:

LaNiO3,Silicon substrate,Thermal transistor

The integration of high-quality functional oxide epitaxial thin films on Si substrates is crucial for realizing next-generation electronic and thermal devices. We have previously demonstrated the potential of epitaxial LaNiO₃ thin films grown on Si substrates for thermal transistor applications by utilizing reversible modulation of thermal conductivity through protonation. In this presentation, we report that improving the mosaicity of the thin films significantly enhances the thermal switching performance of oxide thin films on Si substrates, achieving performance comparable to that of films grown on oxide substrates.