[8p-A21-1~18] 6.4 Thin films and New materials

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-A21-18] Cu Resistivity Reduction by Ta Surface Chemical-State Control Based on In-situ XPS Analysis

〇Yukiaki Oono¹, Yousuke Machida¹, Kazuhiko Tonari¹, Kyouji Notaki², Mauo Sogou², Daisuke Sakai², Shuzo Fujimura^2,3 (1.ULVAC Inc., 2.ULVAC-PHI Inc., 3.Science Tokyo)

Keywords:

Ta surface chemical-state control,In-situ XPS,Semiconductor metal interconnects

This presentation discusses plasma-based control of the Ta surface chemical state for Cu films used in semiconductor metallization. In this study, Ar+O2 and Ar+N2 plasma treatments were applied to the Ta surface before Cu deposition, and their influence on the film properties of subsequently deposited Cu was investigated. The Ta surface chemical state was analyzed by in-situ XPS without air exposure, enabling direct evaluation of plasma-induced surface changes before Cu/Ta interface formation. The results show that controlling the interfacial chemical state by plasma treatment improves Cu film properties and reduces Cu film resistance by approximately 25%. These findings suggest that Ta surface chemical-state control is a promising approach for improving Cu film quality in semiconductor metal interconnect processes.