[8p-A21-1~18] 6.4 Thin films and New materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-A21-5] N₂ bubbled carrier gas through an NH₃ aqueous solution for Cu₃N growth by Mist CVD

〇Azuki Morita¹, Chisato Tsukioka¹, Tomohiro Yamaguchi¹, Hiroki Nagai¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

Keywords:

crystal growth,Mist CVD,Cu3N

Cu₃N growth by the Mist CVD was investigated by focusing on pH of source solution. Previously, the pH of the source solution was decreased during the growth. In the case, the growth with a short growth time less than 1 hour was allowed because the viscosity of the source solution increased as a function of the time. A mixture phase composed of Cu₃N and Cu₂O was observed from the grown layers with a long growth time over 60 min. It was clarified that this reason was attributed to release of ammonia from the solution during a mist formation. Thus, we investigated a N₂ bubbled carrier gas (BCG) through an NH₃ aqueous solution during Cu₃N growth by the Mist CVD. The results indicated that the BCG was effective to prevent the release of ammonia. This leads to the stable pH of source solution. As a result, a single-phase Cu₃N growth was achieved with a long growth time of 90 and 120 min.