[8p-B11-1~16] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[8p-B11-12] Electronic properties and dissociation channels of CHF₂CF₂CH₂F molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

CHF2CF2CH2F,Etching gas,Primarily dissociation process

Primarily Dissociation routes are discussed by using computational chemistry. Briefly summarized, the appearance energies of CHF₂ ion and the counterpart ion (CF₂CH₂F) are almost the same (12.64 and 12.57 eV) which are predominantly produced at slightly higher than the vertical ionization region (12.2 eV), and similarly appearance energies of CH₂F⁺ and CF₂CHF₂⁺ (the counterpart ion) are produced at 13.1 eV. In the excitation 1process, CHF₂CF₂CH₂F predominantly dissociates to C₃H₃F₄ + F at the C-F bonds. In the electron attachment process, F^-+CHF₂CHCH₂F is produced by the vertical electron attachment to 3P Rydberg state at approximately 3.0-3.7 eV.