[8p-B11-1~16] 8.2 Plasma deposition of thin film, plasma etching and surface treatment | The 87th JSAP Autumn Meeting 2026

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Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[8p-B11-1~16]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Sep 8, 2026 2:00 PM - 6:30 PM JST
Tue. Sep 8, 2026 5:00 AM - 9:30 AM UTC

B11 (Faculty of Engineering B Block)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-B11-1]Plasma atomic layer oxidation of silicon ~Oxidation temperature and self-limitation~

〇Shota Nunomura¹, Kunihiro Kamataki², Masaharu Shiratani² (1.AIST, 2.Kyushu Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-B11-2]Plasma etching of SiO₂ ~ion species, barrier layer, and damage mitigation~

〇Shota Nunomura¹, Yusuke Imai², Shih-Nan HSIAO², Takayoshi Tsutsumi², Masaru Hori² (1.AIST, 2.Nagoya Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-3]Quantitative Evaluation Method of Plasma-induced Damage in PECVD SiO₂ Films using Discharge Current Transient Spectroscopy (DCTS): ΔQ_dcts Method

〇Kei Seki¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-4]Investigation of interfacial structural changes in high-k/metal gate stacks induced by nitrogen radical treatment after TiN deposition

〇Mizuki Yano¹, Honoka Kido¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-5]Changes in dielectric breakdown mode and processing time dependence of high-k gate insulating films due to nitrogen radical post-treatment

〇(M2)Honoka Kido¹, Mizuki Yano¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-6]Energy dependence of electron-beam-assisted GaN surface fluorination

〇(M2)Daito Shimazu¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-7]Oxygen radical reaction of SiGe for selective isotropic etching of Si/SiGe

〇(M1C)Yamato Iwata¹, Takayoshi Tsutstumi², Katsunori Makihara¹, Yuji Yamamoto³, Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS, 3.IHP)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-8]Effects of O₂ Addition on Highly Selective SiOCN Etching Using NF₃-based Plasma

〇Takahiro Goya¹, Masanaga Fukasawa¹, Yoshihiro Hayashi¹ (1.SFRC AIST)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-B11-9]Analysis of Dry Etching Characteristics of Polyimide for Redistibution Layer

〇Ryoga Hosoda¹, Yoichiro Kurita², Kenichi Inoue¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹ (1.Nagoya Univ., 2.Science Tokyo)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-10]Analysis of Wiggling Mechanisms in Fine ACL Patterns

〇Taiga Kasai¹, Miyako Matsui², Makoto Miura¹, Kenichi Kuwahara¹ (1.Hitachi High-Tech Corp., 2.Hitachi Ltd., R&D Group)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-B11-11]Electronic properties and dissociation channels of CHF₂CHFCHF₂ molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[8p-B11-12]Electronic properties and dissociation channels of CHF₂CF₂CH₂F molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-B11-13]valuation of a Machine Learning Model for Predicting SiO₂ Film Etching Rate
Based on Plasma and Material Information Science

〇(M2)Kazuki Nagamine^1,2, S.W Fitriani², Takayoshi Tsutsumi³, Masaharu Shiratani¹, Kunihiro Kamataki¹ (1.Kyushu Univ. ISEE, 2.Kyushu Univ. JGMI, 3.Nagoya Univ. cLPS)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-B11-14]Efficient Optimization of Oxide Fill Process Conditions Using Topography Simulation and Robust Bayesian Optimization

〇Takuyo Nakayama¹, Satoru Yokota¹ (1.Kioxia Frontier Tech. R&D)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[8p-B11-15]Surrogate Learning and Optimization for Low-Pressure ICP Coil Design Based on Structural Feature

〇Daiki Kawahito¹, Koki Hayashi¹, Yukiya Saito¹, Hironori Moki¹ (1.Tokyo Electron Ltd.)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-B11-16]Surrogate Model Development and Evaluation for Initial-Value Prediction in Plasma Simulations

〇Koki Hayashi¹, Daiki Kawahito¹, Yukiya Saito¹, Hironori Moki¹ (1.Tokyo Electron Ltd.)

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