[8p-B11-1~16] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-5] Changes in dielectric breakdown mode and processing time dependence of high-k gate insulating films due to nitrogen radical post-treatment

〇(M2)Honoka Kido¹, Mizuki Yano¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

Keywords:

nitrogen radical,leakage current,dielectric breakdown

Nitrogen radical irradiation was performed on high-k gate stacks after TiN gate electrode formation, aiming at applications to nanosheet transistors. Depending on the irradiation time, low-voltage and medium-voltage breakdown events were selectively suppressed. These results indicate that nitrogen radicals do not uniformly reduce defects responsible for dielectric breakdown, but rather affect different breakdown modes depending on the irradiation time. In this presentation, the relationship between defect states in HfSiOx and nitrogen radical irradiation time will be discussed.