[8p-B11-1~16] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-6] Energy dependence of electron-beam-assisted GaN surface fluorination

〇(M2)Daito Shimazu¹, Takayoshi Tsutsumi², Makoto Sekine², Kenichi Inoue², Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS)

Keywords:

Atomic Layer Etching,Electron-Beam,Gallium Nitride

To realize next-generation GaN power transistors, the fluorination modification mechanism in electron-beam (EB)-assisted atomic layer etching (ALE) was analyzed using XPS. Evaluating EB energies from 50 to 1000 eV revealed structural changes in the modified surface film and showed that Ga-F3 formation does not increase at 500 eV or higher. This behavior is attributed to the energy dependence of EB penetration depth and the diffusion limits of fluorine-reactive species, suggesting that EB energy is a parameter determining the modified film structure.