[8p-B11-1~16] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-B11-7] Oxygen radical reaction of SiGe for selective isotropic etching of Si/SiGe

〇(M1C)Yamato Iwata¹, Takayoshi Tsutstumi², Katsunori Makihara¹, Yuji Yamamoto³, Kenji Ishikawa² (1.Nagoya Univ. Eng, 2.Nagoya Univ. cLPS, 3.IHP)

Keywords:

SiGe,oxygen radicals,X-ray photoelectron spectroscopy

For the formation of Si/SiGe nanosheet channels in next-generation GAAFETs, highly selective and isotropic etching is required. In this study, oxygen radicals were irradiated onto an HF-treated SiGe surface after removing the native oxide, and the oxidation state was evaluated by in-situ XPS. The results showed that the fraction of oxidized components in the Ge 3d spectrum was larger than that in the Si 2p spectrum, suggesting that oxidation proceeds preferentially from Ge-containing bonds. This difference may influence the control of etching selectivity.