[8p-E206-1~17] 7.1 X-ray technologies

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-E206-4] High Reflectivity Mo/Si Multilayer Mirrors with Nitride Barrier Layers (2)

〇(M2)Yuta Fujisawa¹, Maidul HAQUE¹, Shun UJI¹, Ryohei SHIBATA¹, Mitsunori TOYODA¹ (1.Tokyo Polytechnic Univ.)

Keywords:

reactive sputtering,X-ray Reflectance,EUV Reflectance

In Mo/Si multilayer mirrors operating in the 13 nm wavelength region, the normal-incidence reflectivity decreases due to the formation of an interfacial diffusion layer. To address this issue, we have investigated a method of introducing Mo₂N barrier layers at each Mo/Si interface using N₂ reactive sputtering. We previously reported that incorporating this barrier layer at the Mo-on-Si interfaces of a 20-period Mo/Si multilayer mirror improved the reflectivity by approximately 3%. In this presentation, we report the evaluation of EUV reflectivity and X-ray reflectivity (XRR) measurements for a 40-period multilayer mirror fabricated using the same method.