[8p-E206-1~17] 7.1 X-ray technologies

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-E206-8] Laser wavelength dependence of Sn-droplet EUV conversion efficiency

〇(M1)Naoki Nagahama¹, Hayato Yazawa¹, Shunya Yamamoto¹, Yuta Takai¹, Kaito Nishimiya², Eiji Takahashi², Takeshi Higashiguchi¹ (1.Utsunomiya Univ., 2.RIKEN)

Keywords:

EUV light source,Conversion efficiency,Double pulse

State-of-the-art semiconductor lithography systems utilize EUV light sources with a wavelength of 13.5 nm, and increasing the output power of these light sources is a key challenge. To achieve higher output power in EUV light sources, it is necessary to identify the main pulse wavelength with the highest efficiency; however, comparative experiments involving three wavelengths have not been conducted to date. Therefore, in this study, we irradiated a liquid-droplet Sn target with a 1 µm pre-pulse and main pulse lasers at three wavelengths (1, 2, and 10 µm), and measured and compared the conversion efficiency and spectrum of the generated EUV light source.