Presentation Information

[8p-E218-10]Reversible Electron Density Control via Persistent Photoconductivity in InAs/AlGaSb Single Quantum Wells

〇(M1C)Kenta Ishibashi1, Takafumi Akiho2, Hiroshi Irie2, Yusuke Nakazawa2, Norio Kumada2, Koji Muraki2, Kyoichi Suzuki1 (1.Fukuoka Inst. Tech., 2.Basic Res. Labs., NTT Inc.)

Keywords:

InAs quantam well,Persistent Photoconductivity,Electron Density Control

Changes in electron density of InAs/AlGaSb single quantum wells were investigated at 1.4 K under visible and infrared LED illumination via the persistent photoconductivity effect.The electron density decreased to 1.1x1015 m-2 after visible-light illumination and increased to 7.4x1015 m-2 after infrared-light illumination. Reversible control of the electron density over a wide range was achieved by alternating visible and infrared illumination.