[8p-E218-1~12] 13.6 Nanostructures, quantum phenomena, and nano quantum devices | The 87th JSAP Autumn Meeting 2026

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Session Details

Oral presentation13 Semiconductors : 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-E218-1~12]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 8, 2026 1:30 PM - 4:45 PM JST
Tue. Sep 8, 2026 4:30 AM - 7:45 AM UTC

E218 (First Year Education Bld. E Block)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-E218-1]Bias dependence of circularly polarized photoluminescence properties of a GaInNAs quantum well sandwiched between GaNAs quantum wells

〇Kyota Nakadate¹, Hiroto Kise¹, Ayano Morita¹, Eita Tagawa¹, Yuma Suzuki¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-E218-2]Quantitative evaluation of spin-polarization amplification dynamics in tunnel-coupled structures of InGaAs quantum dots and a GaNAs quantum well with varying N content

〇Yuma Suzuki¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-E218-3]Carrier transport mechanism in InAs/InAsSb quantum-dot network structures

〇(M2)Ryoga Kai¹, Yoshihiro Naruko¹, Ryota Nakamura¹, Koichi Yamaguchi^1,2 (1.Dep. of Eng. Sci Univ. of Electro-Comm., 2.QFCD2 center Univ. of Electro-Comm.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-E218-4]Photon correlations in telecommunication-wavelength droplet-epitaxial quantum dots

〇Takashi Kuroda¹, Takaaki Mano¹, Kazuaki Sakoda¹ (1.NIMS)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-E218-5]Formation and emission spectrum analysis of Ge QDs/Si microbridge resonators

〇Naoki Otsuka¹, Kentaro Sawano¹, Yuichiro Mitani¹ (1.Tokyo city Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-E218-6]Control of Photoluminescence Dynamics in Single Perovskite Quantum Dots by Near-Field Effect of a Metal-Coated Tip

〇Mao Matsuo¹, Takumi Yamada², Masaki Saruyama², Toshiharu Teranishi², Yoshihiko Kanemitsu², Ikufumi Katayama¹, Hirokazu Tahara¹ (1.Dept. pf Phys., Yokohama Natl. Univ., 2.ICR, Kyoto Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-E218-7]Miniaturization of InAs nanowires by thermal annealing

〇Doma Hachimiya^1,2, Yuki Azuma^1,2, Keita Taniyama^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.RCIQE)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-E218-8]Characterization of vertical gate-all-around tunnel FET using a modulation-doped InGaAs nanowire/Si junction on SOI

〇Kai Fujimoto^1,2, Keita Taniyama^1,2, Yuki Azuma^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.RCIQE)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

The 87th JSAP Autumn Meeting 2026

Session Details

[8p-E218-1~12]13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-E218-1]Bias dependence of circularly polarized photoluminescence properties of a GaInNAs quantum well sandwiched between GaNAs quantum wells

[8p-E218-2]Quantitative evaluation of spin-polarization amplification dynamics in tunnel-coupled structures of InGaAs quantum dots and a GaNAs quantum well with varying N content

[8p-E218-3]Carrier transport mechanism in InAs/InAsSb quantum-dot network structures

[8p-E218-4]Photon correlations in telecommunication-wavelength droplet-epitaxial quantum dots

[8p-E218-5]Formation and emission spectrum analysis of Ge QDs/Si microbridge resonators

[8p-E218-6]Control of Photoluminescence Dynamics in Single Perovskite Quantum Dots by Near-Field Effect of a Metal-Coated Tip

[8p-E218-7]Miniaturization of InAs nanowires by thermal annealing

[8p-E218-8]Characterization of vertical gate-all-around tunnel FET using a modulation-doped InGaAs nanowire/Si junction on SOI

[8p-E218-9]Fabrication of Cu_2-xS nanodisk superlattice devices and measurement of their optoelectronic responses

[8p-E218-10]Reversible Electron Density Control via Persistent Photoconductivity in InAs/AlGaSb Single Quantum Wells

[8p-E218-11]Coherent coupling between an on-chip terahertz resonator and a gate-defined semiconductor quantum dot

[8p-E218-12]Coulomb blockade and stochastic charge transport in single perovskite quantum dots

Session Details

[8p-E218-1~12]13.6 Nanostructures, quantum phenomena, and nano quantum devices

[8p-E218-1]Bias dependence of circularly polarized photoluminescence properties of a GaInNAs quantum well sandwiched between GaNAs quantum wells

[8p-E218-2]Quantitative evaluation of spin-polarization amplification dynamics in tunnel-coupled structures of InGaAs quantum dots and a GaNAs quantum well with varying N content

[8p-E218-3]Carrier transport mechanism in InAs/InAsSb quantum-dot network structures

[8p-E218-4]Photon correlations in telecommunication-wavelength droplet-epitaxial quantum dots

[8p-E218-5]Formation and emission spectrum analysis of Ge QDs/Si microbridge resonators

[8p-E218-6]Control of Photoluminescence Dynamics in Single Perovskite Quantum Dots by Near-Field Effect of a Metal-Coated Tip

[8p-E218-7]Miniaturization of InAs nanowires by thermal annealing

[8p-E218-8]Characterization of vertical gate-all-around tunnel FET using a modulation-doped InGaAs nanowire/Si junction on SOI

[8p-E218-9]Fabrication of Cu2-xS nanodisk superlattice devices and measurement of their optoelectronic responses

[8p-E218-10]Reversible Electron Density Control via Persistent Photoconductivity in InAs/AlGaSb Single Quantum Wells

[8p-E218-11]Coherent coupling between an on-chip terahertz resonator and a gate-defined semiconductor quantum dot

[8p-E218-12]Coulomb blockade and stochastic charge transport in single perovskite quantum dots

[8p-E218-9]Fabrication of Cu_2-xS nanodisk superlattice devices and measurement of their optoelectronic responses