[8p-E218-1~12] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-E218-2] Quantitative evaluation of spin-polarization amplification dynamics in tunnel-coupled structures of InGaAs quantum dots and a GaNAs quantum well with varying N content

〇Yuma Suzuki¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

Keywords:

spin dynamics,dilute nitride semiconductor,photoluminescence

Tunnel-coupled nanostructures consisting of InGaAs quantum dots and a dilute nitride GaNAs quantum well can amplify electron spin polarization at room temperature(RT). In this study, we prepared samples with different N contents of GaNAs, and performed rate equation analysis on their time-resolved circularly polarized photoluminescence at RT. The analysis revealed that the selective capture of minority spins was significantly enhanced under the resonant condition of coupled energy levels, resulting in a high degree of spin polarization rapidly.