[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-E301-12] Structural Characterization of Gallium Oxide Thin Films Grown on 4H-SiC Substrates by Mist Chemical Vapor Deposition (2)

Taisei Oya¹, 〇Kazuyuki Uno¹ (1.Wakayama Univ.)

Keywords:

gallium oxide,mist chemical vapor deposition,silicon carbide

Gallium oxide (Ga₂O₃) is a promising ultra-wide-bandgap semiconductor for next-generation power and deep-ultraviolet optoelectronic devices. In this study, Ga₂O₃ was grown on hydrophilized 4H-SiC(0001) substrates by mist CVD to address the limitations of low thermal conductivity and the difficulty of p-type doping. Growth at 700 degC produced a single-phase β-Ga₂O₃ film. X-ray diffraction measurements revealed an epitaxial relationship with six rotational domains of β-Ga₂O₃(20-2), while DFM measurements showed a smooth surface with an RMS roughness of 0.80 nm. These results indicate that optimization of the SiC surface treatment enables the growth of single-phase Ga₂O₃ films on SiC substrates.