The 87th JSAP Autumn Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8p-E301-1~22]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 8, 2026 12:15 PM - 6:30 PM JST
Tue. Sep 8, 2026 3:15 AM - 9:30 AM UTC
E301 (First Year Education Bld. E Block)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[8p-E301-1]Evaluation of Pressure Response in ZnO Pressure Sensors with MBE-Grown MgxZn1-xO Thin Films

〇Haruyuki Endo1 (1.Tohoku Gakuin Univ.)
12:30 PM - 12:45 PM JST(3:30 AM - 3:45 AM UTC)

[8p-E301-2]Composition Dependent Thermal Quenching in Near-band-edge Emission of Rocksalt-Structured MgZnO Alloys

〇Kyosuke Tanaka1, Kotaro Ogawa1, Yuichi Ota2, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Toyama Prefectural Univ.)
12:45 PM - 1:00 PM JST(3:45 AM - 4:00 AM UTC)

[8p-E301-3]Configuration-coordinate analysis of lattice relaxation induced by charge-state changes in Al substitutional defects in MgO

〇Yuichi Ota1, Takeyoshi Onuma2 (1.Toyama Pref. Univ., 2.Kogakuin Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[8p-E301-4]Study on Li Doping for MgO Films by Mist CVD Method

〇Takumi Hosaka1, Sanshiro Nakashima1, Kyosuke Tanaka1, Kotaro Ogawa1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[8p-E301-5]Heat-resistant Characteristics of Li doped NiO Films Deposited by RF Magnetron Sputtering

〇(M1)Shunya Matsui1, Harunobu Yasuda1, Hironobu Miyamoto2, Kohei Sasaki2, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Novel Crystal Technology)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-E301-6]UV light Sensor with Interdigital Electrodes on NiO of a NiO/Ga2O3 Junction

〇Shinji Nakagomi1, Yota Chiba1 (1.Ishinomaki Senshu)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-E301-7]Growth of α-(Al,Ga)2O3 thin films on α-Cr2O3 templates by mist-CVD

〇Riena Jinno1, Xiao Shiyu2, Takayoshi Oshima3, Satoshi Iwamoto1, Kazuto Murakami2, Katsuhiro Imai2, Takahiro Tomita2 (1.The University of Tokyo, 2.NGK Corporation, 3.NIMS)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-E301-8]Halide vapor phase epitaxy of c-plane α-Ga2O3 on an α-(Cr0.8Fe0.2)2O3 template

〇Yuichi Oshima1, Takayoshi Oshima1, Shiyu Xiao2, Kazuto Murakami2, Katsuhiro Imai2, Takahiro Tomita2 (1.NIMS, 2.NGK)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-E301-9]Investigation of Solution Conditions for α-Ga2O3 Films Growth on α-Cr2O3 Templates by Mist CVD

〇Ryuma Iida1, Shiyu Xiao2, Kazuto Murakami2, Asato Terukina1, Soma Nishio1, Hinata Nakahachi1, Takayosi Onuma1, Tohru Honda1, Katuhiro Imai2, Takahiro Tomita2, Tomohiro Yamaguchi1 (1.Kogakuin Univ., 2.NGK Coporation)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-E301-10]Band Structure Analysis of Si-Doped α-(AlGa)2O3 by Photoelectron Spectroscopy

〇Yuta Okuyama1, Hironori Okumura1 (1.Univ. of Tsukuba)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-E301-11]Quantum Chemical Analysis of Mist CVD Process for Growth of Ga2O3

〇Koshi Shimazaki1, Shizuo Fujita1, Kentaro Kaneko2, Isao Takahashi2, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-E301-12]Structural Characterization of Gallium Oxide Thin Films Grown on 4H-SiC Substrates by Mist Chemical Vapor Deposition (2)

Taisei Oya1, 〇Kazuyuki Uno1 (1.Wakayama Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[8p-E301-13]Electrical characteristics of vertical β-Ga2O3 Schottky barrier diodes using impurity-reduced thin films grown by mist CVD

〇Yuki Isobe1, Yuki Yamamoto2, Takeru Wakamatsu1, Shigenori Shimizu2, Takashi Nishinoiri3, Kensuke Mizukoshi3, Toshinori Taishi4, Keigo Hoshikawa4, Shizuo Fujita1, Kentaro Kaneko5, Isao Takahashi5, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Oxide Corp., 3.Ceratech Japan Corp., 4.Shinshu Univ., 5.Ritsumeikan Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-E301-14]Effect of Mist Supply Method on Growth of (010) β-Ga2O3 Films by Mist CVD Method

〇(M2)Sei Saito1, Makoto Sugitani1, Tomohiro Yamaguchi1, Sota Yamanaka1, Kohei Sasaki2, Akito Kuramata2, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.Novel Crystal Technology, Inc.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-E301-15]TMAH wet etching characteristics of (−102) and (512) β-Ga2O3 substrates

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[8p-E301-16]Thermal Behavior of the 2.5-eV Optical Defect Level in HVPE-Grown β-Ga2O3 Homoepitaxial Films

〇Yoshitaka Nakano1, Daiki Katsube2, Takashi Ogawa2, Yukari Ishikawa2, Kohei Sasaki3, Akito Kuramata3 (1.Chubu Univ., 2.JFCC, 3.Novel Crystal Technology)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-E301-17]Evaluation of surge current withstand capability and its dependence on surface orientation in vertical β-Ga2O3 SBDs.

〇Masaki Taya1, Yohei Yuda1, Kohei Ebihara1, Ryuji Sakai1, Yoshiki Iba2, Yuma Terauchi2, Yoshinao Kumagai2 (1.Mitsubishi Electric, 2.Tokyo Univ. of Agric. and Tech.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[8p-E301-18]Light Emission Analysis of N-Ion-Implanted CBL in β-Ga2O3 under Leakage Conditions

〇Kohei Ebihara1, Tetsuro Hayashida1, Munetaka Noguchi1, Ryuji Sakai1, Rina Tanaka1, Masaki Taya1, Tatsuro Watahiki1 (1.Mitsubishi Electric)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-E301-19]Hysteresis of Reverse-bias Leakage Current in a Nitrogen-implanted β-Ga2O3 CBL

〇Munetaka Noguchi1, Tetsuro Hayashida1, Kohei Ebihara1, Masaki Taya1, Tatsuro Watahiki1 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-E301-20]Evaluation of deep traps in Mg/N co-implanted β-Ga2O3 via TSC method

〇Hitoshi Takane1, Yusuke Yamashita1, Fenfen Fenda Florena2, Hironobu Miyamoto2, Kohei Sasaki2, Daigo Kikuta1 (1.Toyota Central R&D Labs., Inc., 2.Novel Crystal Technology, Inc.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[8p-E301-21]First-Principles and Thermodynamic Studies of (AlxGa1-x)2O3 Growth by MBE

〇Rie Togashi1, Yuma Terauchi2, Akira Kusaba3, Masataka Higashiwaki4, Yoshinao Kumagai2 (1.Sophia Univ., 2.Tokyo Univ. of Agric. and Tech., 3.RIAM, Kyushu Univ., 4.Osaka Metropolitan Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-E301-22]High-quality β-Ga2O3 epitaxy by self driving sputtering

〇Yuuki Wakabayashi1, Yui Ogawa1, Franz Benedict Romero1, Takuma Otsuka2, Yoshitaka Taniyasu1 (1.NTT BRL, 2.NTT CS Lab.)
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