[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-E301-15] TMAH wet etching characteristics of (−102) and (512) β-Ga₂O₃ substrates

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,wet etching