[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[8p-E301-18] Light Emission Analysis of N-Ion-Implanted CBL in β-Ga₂O₃ under Leakage Conditions

〇Kohei Ebihara¹, Tetsuro Hayashida¹, Munetaka Noguchi¹, Ryuji Sakai¹, Rina Tanaka¹, Masaki Taya¹, Tatsuro Watahiki¹ (1.Mitsubishi Electric)

Keywords:

galium oxide,Ga2O3,CBL

Due to the significant challenge of p-type doping in β-Ga₂O₃ devices, a vertical MOSFET with a Current Blocking Layer (CBL) formed by ion implantation has been proposed as an alternative to the p-type layer. At the 73rd JSAP Spring Meeting, we reported that light emission was observed in CBL-TEGs (Test Element Groups) formed by nitrogen implantation under leakage conditions. In this study, we analyzed the emission spectrum to investigate the mechanisms of leakage and light emission.