Presentation Information
[8p-E301-19]Hysteresis of Reverse-bias Leakage Current in a Nitrogen-implanted β-Ga2O3 CBL
〇Munetaka Noguchi1, Tetsuro Hayashida1, Kohei Ebihara1, Masaki Taya1, Tatsuro Watahiki1 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)
Keywords:
gallium oxide,hysteresis,leakage current
The hysteresis of the reverse-bias leakage current in a nitrogen-implanted β-Ga2O3 current blocking layer was investigated through I-V and I-t measurements soon after light irradiation. It was found that the transient reverse-bias leakage current does not necessarily decrease monotonically, suggesting that the hysteresis arises from electron trapping and detrapping processes at energy levels formed in the current blocking layer.