[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[8p-E301-19] Hysteresis of Reverse-bias Leakage Current in a Nitrogen-implanted β-Ga₂O₃ CBL

〇Munetaka Noguchi¹, Tetsuro Hayashida¹, Kohei Ebihara¹, Masaki Taya¹, Tatsuro Watahiki¹ (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

Keywords:

gallium oxide,hysteresis,leakage current

The hysteresis of the reverse-bias leakage current in a nitrogen-implanted β-Ga₂O₃ current blocking layer was investigated through I-V and I-t measurements soon after light irradiation. It was found that the transient reverse-bias leakage current does not necessarily decrease monotonically, suggesting that the hysteresis arises from electron trapping and detrapping processes at energy levels formed in the current blocking layer.