[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[8p-E301-20] Evaluation of deep traps in Mg/N co-implanted β-Ga₂O₃ via TSC method

〇Hitoshi Takane¹, Yusuke Yamashita¹, Fenfen Fenda Florena², Hironobu Miyamoto², Kohei Sasaki², Daigo Kikuta¹ (1.Toyota Central R&D Labs., Inc., 2.Novel Crystal Technology, Inc.)

Keywords:

Gallium oxide,Current blocking layer,Thermally stimulated current

熱刺激電流（TSC）法を用いて、Mg/N共注入β-Ga₂O₃CBL中の深い準位を評価した。