[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[8p-E301-22] High-quality β-Ga2O3 epitaxy by self driving sputtering

〇Yuuki Wakabayashi¹, Yui Ogawa¹, Franz Benedict Romero¹, Takuma Otsuka², Yoshitaka Taniyasu¹ (1.NTT BRL, 2.NTT CS Lab.)

Keywords:

self driving sputtering,bayesian optimization,Ga2O3