[8p-E301-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-E301-9] Investigation of Solution Conditions for α-Ga2O3 Films Growth on α-Cr2O3 Templates by Mist CVD

〇Ryuma Iida¹, Shiyu Xiao², Kazuto Murakami², Asato Terukina¹, Soma Nishio¹, Hinata Nakahachi¹, Takayosi Onuma¹, Tohru Honda¹, Katuhiro Imai², Takahiro Tomita², Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.NGK Coporation)

Keywords:

a-Ga2O3,Mist CVD Method