[8p-E308-1~11] 15.7 Crystal characterization, impurities and crystal defects

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-E308-1] Impact of tilt angle in growth direction on dislocation density in SiC grown by PVT

〇Koichi Kakimoto¹, Satoshi Nakano² (1.NICHe, Tohoku Univ., 2.RIAM, Kyushu Univ.)

Keywords:

semiconductor,SiC,simulation

This paper reports the distributions of stress and dislocation density in SiC crystals grown by PVT method. We focused on the impact of diameter increase to the distributions of stress and dislocation density.