The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[8p-E308-1~11]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 8, 2026 1:30 PM - 4:30 PM JST
Tue. Sep 8, 2026 4:30 AM - 7:30 AM UTC
E308 (First Year Education Bld. E Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-E308-1]Impact of tilt angle in growth direction on dislocation density in SiC grown by PVT

〇Koichi Kakimoto1, Satoshi Nakano2 (1.NICHe, Tohoku Univ., 2.RIAM, Kyushu Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-E308-2]Observation of stresses on (001)-oriented n-doped InP by Infared Polariscope

〇Yasuhiro Matsuo1, Tomoki Oku1, Naoyuki Kawabata1, Naoki Nakamura1, Masayuki Fukuzawa2 (1.Mitsubishi Electric, 2.Kyoto Institute of Technology)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-E308-3]Evaluation of Hatch Formation and Strain Relaxation Behavior in SiGe Thin Films Grown on (110)Si Substrates by Cross-Sectional TEM Observation and Micro-Raman Mapping

〇Yuta Ito1,2, Kiu Inami1,3, Koji Usuda4, Naoto Kumagai3,5, Toshifumi Irisawa3,5, Atsushi Ogura1,4 (1.Meiji Univ., 2.JSPS Research Fellow, 3.SFRC, AIST, 4.MREL, 5.LSTC)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-E308-4]Comparison of dislocation behavior due to thermal shock in [100] and [110] CZ-Si Crystal growth

〇Shoma Tsukada1, Hiroyuki Saito2, Hisashi Matsumura1,2, Takeshi Hoshikawa1, Toshinori Taishi1 (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-E308-5]Annihilation Behavior of Void Defects in Si (100) and (110) Wafers during Oxidation by RTP (Ⅱ)

〇(D)Takuya Kusunoki1,2, Haruo Sudo2, Ken Hayakawa2, Yuma Kobayashi2, Hisashi Matsumura2, Koji Sueoka3 (1.Grad. Sch., Okayama Pref. Univ., 2.Global Wafers Japan Co., Ltd., 3.Okayama Pref. Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-E308-6]Theoretical Study of Gettering Effect of BMD Nuclei Introduced in RTP Wafers

〇Hiroya Iwashiro1,2, Hibiki Bekku1, Iori Takeda1, Haruo Sudo2, Ken Hayakawa2, Eiji Kamiyama2, Koji Sueoka3 (1.Graduate School of Computer Science and Systems Engineering, Okayama Prefectural Univ., 2.Global Wafers Japan Co., Ltd., 3.Okayama Prefectural Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-E308-7]Numerical Simulation of Recrystallization Behavior in High-Dose Hydrocarbon Molecular-Ion-Implanted Silicon Wafers

〇Kazunari Kurita1, Hiroki Kondo1 (1.Kyushu Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[8p-E308-8]Equilibrium and Kinetic Models for Sb Evaporation during Sb-Doped CZ-Si Growth.

〇Kentaro Takagi1, Shin'ichi Nishizawa2, Ryota Suewaka1 (1.SUMCO Corp., 2.Kyushu Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[8p-E308-9]Quality of silicon substrate and point defects: Renaissance (16) Effect of pressure and stress on point defects

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research Center)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-E308-10]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (29) Shallow thermal donor high temperature type NO/ Photoluminescence failed measurement of nitrogen concentration

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-E308-11]Measurement of carbon concentration in silicon crystal: Renaissance
(33) Polysilicon by IR /PL standardization failed

〇Naohisa Inoue1, Shuichi Okuda1, Shuichi kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)
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