Presentation Information
[8p-E308-10]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (29) Shallow thermal donor high temperature type NO/ Photoluminescence failed measurement of nitrogen concentration
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,nitrogen,infrared absorption
We found many candidates of LVM absorption in 2004. We assigned O(NO)O at 973 and 1002 cm-1 and O(NO) at 855 and 1065 cm-1, the last one by the collaboration with the theorists. There are many candidates of the high temperature components of (NO) square and (ONO) double ring predicted by the theorists. Some of them were found to be the differential phonon absorption. We found the predicted absorption of NO at 800 cm-1 by deleting the (NN)O absorption at 801 cm-1. It is stable and dominant at above 750 ℃. Tajima proposed to use photoluminescence of N-Al pair introduced by Al ion implantation. However, many problems were reported by themselves. 1.The signal is varied by oxygen concentration.
2.The signal is changed by the annealing condition. 3.The signal is changed by the ion implantation condition. 4.Neighboring luminescence interferes with the signal.
He joined the JEIDA Standardization project and received the samples but stopped working later. IR, CPAA and SIMS were standardized.
2.The signal is changed by the annealing condition. 3.The signal is changed by the ion implantation condition. 4.Neighboring luminescence interferes with the signal.
He joined the JEIDA Standardization project and received the samples but stopped working later. IR, CPAA and SIMS were standardized.