Presentation Information
[8p-E308-11]Measurement of carbon concentration in silicon crystal: Renaissance
(33) Polysilicon by IR /PL standardization failed
〇Naohisa Inoue1, Shuichi Okuda1, Shuichi kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,carbon concentration,infrared absorption
We established measurement of 1014/cm3 carbon in single crystal Si by RT IR. Differential phonon absorption bands (DPAB) were found to be the problem. We found the same problem in poly-Si. In 1015/cm3 range, DPABs are weak on the higher wavenumber side. In 1014/cm3 range, the carbon band is still clearly identified. Low temperature measurement is not suffered from DPAB so that 1013/cm3 will be measured. The Photoluminescence Standard has following problems. 1.MCZ crystal with 1017/cm3 [O] is arrowed. Dominant CZ and FZ samples are excluded. 2. High resistivity is arrowed. Wafers for major devices are excluded. 3.Only a few datapoints are used for calibration, which scatter twice. 30% error is expected. 4.Relation between intensity and concentration is nonlinear. Calibration lines are approximate. 5.Current and time of electron irradiation are not described. It is impossible to prepare samples. 6.Measurement of standard samples of known content is necessary for instrument calibration.