Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-E308-2]Observation of stresses on (001)-oriented n-doped InP by Infared Polariscope

〇Yasuhiro Matsuo¹, Tomoki Oku¹, Naoyuki Kawabata¹, Naoki Nakamura¹, Masayuki Fukuzawa² (1.Mitsubishi Electric, 2.Kyoto Institute of Technology)

Keywords:

InP,Infared Polariscope

We attempted to observe the strain on an InP single-crystal substrate after applying localized stress during a device manufacturing process using infrared polariscope. As a result, we observe signals from the plastic deformation of the InP formed by the stress application. This indicates that the method has potential for evaluating the strain distribution of wafers during device manufacturing.

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