[8p-E308-1~11] 15.7 Crystal characterization, impurities and crystal defects

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[8p-E308-4] Comparison of dislocation behavior due to thermal shock in [100] and [110] CZ-Si Crystal growth

〇Shoma Tsukada¹, Hiroyuki Saito², Hisashi Matsumura^1,2, Takeshi Hoshikawa¹, Toshinori Taishi¹ (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)

Keywords:

silicon,dislocation