[8p-N101-1~14] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N101-11] Vertical GaN-on-Si Growth Technology Utilizing a Novel Buffer Layer Formation Technique

〇Fumio Kawamura¹, Takeyoshi Onuma², Masataka Imura¹, Kazutaka Mitsuishi¹ (1.NIMS, 2.Kogakuin Univ.)

Keywords:

GaN on Si,Vertical device,Transistor

Vertical GaN-on-Si devices are expected for AI servers and electric vehicles due to their high-current and high-voltage operation. To realize these vertical devices on low-cost Si substrates , we developed a novel amorphous-like interlayer (AL-IL) formation technique. We successfully achieved excellent epitaxial growth of GaN films on Si substrates via an ultra-thin metal silicide layer , confirming low-resistance and ohmic electrical characteristics in the vertical direction.