The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[8p-N101-1~14]15.4 III-V-group nitride crystals

Tue. Sep 8, 2026 1:30 PM - 5:15 PM JST
Tue. Sep 8, 2026 4:30 AM - 8:15 AM UTC
N101 (First Year Education Bld. N Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-1]Evaluation of crystal orientation of room-temperature in-situ sputtered Ti on pulsed-sputtered n-type AlGaN

〇(DC)Aiko Naito1, Hiroshi Fujioka1 (1.IIS, Utokyo)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-N101-2]Fabrication of InAlN/GaN HEMTs using regrown degenerate GaN (d-GaN) ohmic contacts by sputtering

〇Asaki Kamio1, Hiroshi Fujioka1 (1.IIS UTokyo)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[8p-N101-3]Study of Mg-doped GaN sputtered films using Mg-Ga sputtering targets

〇Ruku Ozaki1, Junya Iihama1, Hidehiko Misaki1, Mirei Tokiwa1, Yoshihiro Ueoka1, Masami Mesuda1 (1.Tosoh corporation)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-4]Investigation of low-temperature p-GaN growth for high-efficiency GaInN-based red LEDs

〇(M1)Ritsuki Ninomiya1, Yuki Oba1, Ai Sakakibara1, Minori Kinoshita1, Koichi Naniwae2, Atsushi Suzuki2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.E&E Evolution)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-N101-5]Control of surface termination of r-sapphire via thermal pretreatment and improved crystallinity of a-AlN

〇Ryota Akaike1,2, Shinnosuke Mori1, Hiroki Yokoyama1, Hiroki Yasunaga2,3, Takao Nakamura1,2, Hideto Miyake1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[8p-N101-6]Mechanism of polarity inversion in high-temperature AlN grown on nitridation sapphire

〇Yuki Kuwahara1, Koki Fujii1, Yuto Matsubara1, Yukiya Hayashi1, Soki Shimizu1, Yuusuke Takashima1,2, Yoshiki Naoi1,2, Ken Matsumura3, Mirei Tokiwa4, Hidehiko Misaki4, Yoshihiro Ueoka4, Masami Mesuda4, Kentaro Nagamatsu1,2,5 (1.Graduate School of Science and Technology for Innovation, Tokushima Univ., 2.pLED, Tokushima Univ., 3.Tosoh Analysis and Research Center Co., Ltd., 4.Tosoh Corporation, 5.IPHF, Tokushima Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[8p-N101-7]Investigation of the step-free surface of the terrace in AlN macro step by Ga surfactant effect

〇(D)Koki Fujii1, Yuto Matsubara1, Soichiro Iseki1, Yukiya Hayashi1, Yuki Kuwahara1, Soki Shimizu1, Yuusuke Takashima1,2, Yoshiki Naoi1,2, Kentaro Nagamatsu1,2,3 (1.G. S. Sci. Tech. Innovation, Tokushima Univ., 2.pLED, Tokushima Univ., 3.IPHF, Tokushima Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[8p-N101-8]Crystal truncation rod scattering measurement of AlN films on GaN using in situ X-ray diffraction

〇Yusuke Hayashi1, Takuo Sasaki2 (1.NIMS, 2.QST)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-9]Superconducting epitaxial Nb(Al, Sc)Nx films on AlN

〇Yuki Kato1, Koryo Masuzawa1, Takayuki Harada1,2, Hideto Miyake3, Kazuhisa Ikeda1, Atsushi Kobayashi1 (1.Tokyo Univ. of Science, 2.NIMS, 3.Mie Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[8p-N101-10]Fabrication of Hexagonal ε-NbN Thin Films on GaN by Sputtering

〇Takeru Kodama1, Yuki Kato1, Koryo Masuzawa1, Takayuki Harada1,2, Kazuhisa Ikeda1, Atsushi Kobayashi1 (1.Tokyo Univ. of Science, 2.NIMS)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[8p-N101-11]Vertical GaN-on-Si Growth Technology Utilizing a Novel Buffer Layer Formation Technique

〇Fumio Kawamura1, Takeyoshi Onuma2, Masataka Imura1, Kazutaka Mitsuishi1 (1.NIMS, 2.Kogakuin Univ.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-12]Investigation of Initial Growth Layers in GaN-on-Si Epitaxy Using an Amorphous-Like Interlayer

〇Daigo Yokoi1, Fumio Kawamura2, Naoomi Yamada1 (1.Chubu Univ., 2.NIMS)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[8p-N101-13]Insitu X-ray diffraction measurement of nanochannel epitaxy and remote epitaxy of GaN

〇Shigeya Naritsuka1, Takahiro Maruyama1, Takuo Sasaki2, Kenji Ohwada2, Norihiro Oshime2, James Harries2 (1.Meijo Univ., 2.QST.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[8p-N101-14]Crack-free InAlN thermoelectric thin films with larger thickness

〇Yuma Sakai1, Tsutomu Araki2, Momoko Deura1,3 (1.Waseda Univ., 2.Ritsumeikan Univ., 3.R-GIRO)
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