[8p-N101-1~14] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-12] Investigation of Initial Growth Layers in GaN-on-Si Epitaxy Using an Amorphous-Like Interlayer

〇Daigo Yokoi¹, Fumio Kawamura², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

Keywords:

GaN-on-SI,sputtering,vertical device