[8p-N101-1~14] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[8p-N101-2] Fabrication of InAlN/GaN HEMTs using regrown degenerate GaN (d-GaN) ohmic contacts by sputtering

〇Asaki Kamio¹, Hiroshi Fujioka¹ (1.IIS UTokyo)

Keywords:

regrown contact,degenerate GaN,HEMT