[8p-N101-1~14] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8p-N101-4] Investigation of low-temperature p-GaN growth for high-efficiency GaInN-based red LEDs

〇(M1)Ritsuki Ninomiya¹, Yuki Oba¹, Ai Sakakibara¹, Minori Kinoshita¹, Koichi Naniwae², Atsushi Suzuki², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.E&E Evolution)

Keywords:

GaInN-based red LED,p-GaN,Low-temperature growth

To prevent the thermal degradation of MQWs associated with shifting nitride-based LEDs to longer wavelengths, the low-temperature growth of p-GaN was investigated. Although the electrical properties significantly deteriorated at 800°C, switching the precursor to TEG reduced the resistivity to approximately one-tenth and doubled the carrier concentration. This improvement is inferred to be due to the suppression of carbon incorporation that typically occurs with decreasing growth temperatures. While challenges remain regarding surface flatness and a slight degradation in electrical properties compared to those at 870°C and 840°C, the feasibility of applying this method to the fabrication of red LEDs was demonstrated.