[8p-N101-1~14] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[8p-N101-5] Control of surface termination of r-sapphire via thermal pretreatment and improved crystallinity of a-AlN

〇Ryota Akaike^1,2, Shinnosuke Mori¹, Hiroki Yokoyama¹, Hiroki Yasunaga^2,3, Takao Nakamura^1,2, Hideto Miyake^1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP)

Keywords:

a-plane AlN,sputtering,CAICISS