Presentation Information
[8p-PB1-4]Improvement of a Cu Reaction Model for Self-Ionized Sputtering Simulation
〇Susumu Isono1, Shintaro Tamiya1, Masaya Watanabe1 (1.ULVAC, Inc.)
Keywords:
Self-Ionized Sputtering,Magnetron Plasma,Simulation
We aim to reproduce the Self-Ionized Sputtering (SIS) process using coupled PIC/MC and DSMC simulations. However, simulations employing a conventional Cu reaction model that considers only ionization and excitation processes from the ground state showed that Cu ions were localized near the target and were not sufficiently transported toward the stage. In this study, a new Cu reaction model was developed by introducing stepwise ionization via excited species and charge-exchange collisions of Cu ions. The effect of the new reaction model on Cu-ion transport in SIS discharges was then evaluated.