Presentation Information
[8p-PB1-8]Loss Probabilities of Oxygen Atom on SiO2 Surfaces under Plasma Irradiation
〇Hayato Sato1, Takeda Keigo1 (1.Meijo Univ.)
Keywords:
Oxygen plasma,Surface loss probability,VUV absorption spectroscopy
Using VUV absorption spectroscopy, we measured the distribution of oxygen atom density near the surface of plasma-oxidized SiO2 films formed on fused silica and silicon substrates, and evaluated the surface loss probability based on Milne’s boundary conditions. We analyze the O atom loss processes on SiO2 films formed by different processes and discuss the results of our comparison.