Presentation Information
[8p-PB3-11]Selective Growth Behavior of MoS2 on HfO2/SiO2 Substrates
〇(M1)Yuto Terasaka1, Ryu Hasunuma1 (1.Univ. of Tsukuba)
Keywords:
molybdenum disulfide,chemical vapor deposition,selective growth
We investigated the growth behavior of MoS2 on patterned HfO2/SiO2 substrates by thermal chemical vapor deposition using MoO3 and sulfur powders as precursors. Under conditions where MoS2 was formed, both MoS2 and by-products appeared selectively on the HfO2 regions rather than on the SiO2 regions. This selective formation suggests that the HfO2 surface may provide favorable adsorption sites for Mo-containing precursor species or promote the nucleation of MoS2. However, the MoS2 formed on HfO2 did not exhibit well-defined triangular monolayer domains typically observed on atomically flat substrates. Instead, irregular and particulate multilayer structures were observed, indicating that out-of-plane growth was not sufficiently suppressed relative to in-plane growth. Promoting in-plane growth while suppressing out-of-plane growth remains an important challenge for controlling the morphology and layer number of MoS2 on HfO2.