[8p-PB3-1~46] 17 Nanocarbon and Two-Dimensional Materials (Poster) | The 87th JSAP Autumn Meeting 2026

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Poster presentation17 Nanocarbon and Two-Dimensional Materials : 17 Nanocarbon and Two-Dimensional Materials (Poster)

[8p-PB3-1~46]17 Nanocarbon and Two-Dimensional Materials (Poster)

Tue. Sep 8, 2026 4:00 PM - 5:30 PM JST
Tue. Sep 8, 2026 7:00 AM - 8:30 AM UTC

PB3 (2nd Gymnasium)

[8p-PB3-1]Effect of Hydrogen Flow Rate on Low-Temperature Graphene Formation using High-Power Pulsed Sputtering and Plasma CVD

〇Akihiro Iwata¹, Masanori Shinohara¹ (1.Fukuoka Univ.)

[8p-PB3-2]Investigation of ohmic electrodes of transfer-free graphene on sapphire substrates formed via metal agglomeration technique.

〇(M1)Ryota Matano¹, Naoyuki Sasada¹, Toshiharu Kubo¹, Makoto Miyoshi¹, Takuma Nanjo¹, Takashi Egawa¹ (1.Nagoya Inst.)

[8p-PB3-3]Orientation dependence of ribbon-shaped graphene growth on sapphire substrates by CVD

〇(M2)Yuuki Ohara¹, Yuta Fukui¹, Takato Oda¹, Yoshikazu Kawai¹, Hiroki Hibino¹ (1.Kwansei Gakuin Univ.)

[8p-PB3-4]DFT study of mechanism on remote epitaxial growth

〇(M1)Junji Miura¹, Insung Seo¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

[8p-PB3-5]Investigation of SnS nanoscale thin films and SnS/Al₂S₃/Al MIS structures by Electrostatic Spray Deposition (ESD)

〇Misuzu Tanaka¹, Yoshiki Matsubayashi¹, Keisuke Shibata¹, Kanata Tanaka¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

[8p-PB3-6]Substrate orientation dependence of h-BN grown on sapphire by CVD

〇TAISEI OZASA¹, YOSHIKI HARADA¹, HIROKI HIBINO¹ (1.Kwansei Gakuin Univ.)

[8p-PB3-7]Direct Growth of Multilayer h-BN Films on α-Al₂O₃(0001) Substrates by CVD

〇(M1)Takeru Nakajima¹, Takeshi Watanabe¹, Shinji Koh¹ (1.Aoyama Gakuin Univ.)

[8p-PB3-8]Synthesis of hexagonal boron nitride multilayer thin films by chemical vapor deposition

〇Shota Tanoue¹, Takako Matsunaga¹, Hidemi Otsuka¹, Aika Uchida², Hiroki Ago^2,3, Kenji Kawahara¹ (1.Institute for 2D materials LLC., 2.Kyushu Univ., 3.CSeDE)

[8p-PB3-9]Direct Growth of h-BN on Ferroelectric Substrates Using Permalloy Catalysts

〇Takuto Inaba¹, Shinichiro Mouri¹, Abdul Kuddus² (1.Ritsu Univ., 2.R-GIRO)

[8p-PB3-10]Enhancing the uniformity of CVD-grown hBN using single-crystalline Fe-Ni foil

〇Yui Shimomura¹, Takara Okonai¹, Satoru Fukamachi¹, Hiroki Ago^1,2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. CSeDE)

[8p-PB3-11]Selective Growth Behavior of MoS₂ on HfO₂/SiO₂ Substrates

〇(M1)Yuto Terasaka¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

English Presentation

[8p-PB3-12]Growth of MoS₂ Thin Films Using the Sol-Gel Method and Their Characterisation

〇(M2)LIU HAOTIAN³, Tsuyoshi Takaoka¹, Md Iftekharul Alam², Akinobu Teramoto², Md Arafat Ali³, J. Rika Simon¹ (1.Tohoku Univ. IMRAM, 2.Hiroshima Univ. RISE, 3.Tohoku Univ. Sci.)

[8p-PB3-13]Cooling-condition dependent phase formation during the transition from Mo₆Te₆ to MoTe₂

〇(M2)Hayate Nakano¹, Itsuki Yamada¹, Shintaro Saito¹, Kosuke Yata¹, Keiji Ueno¹, Hong En Lim¹ (1.Saitama Univ.)

[8p-PB3-14]Fabrication of Stacked MoS₂/WS₂ Heterostructure in Nanospace

〇(M1)Kosuke Yata¹, Hayate Nakano¹, Keiji Ueno¹, Hong En Lim¹ (1.Saitama Univ.)

[8p-PB3-15]Raman spectroscopy study on MoS2 film prepared by vacuum heating of MoO3 film immersed in sulfur liquid

〇Taketo Kikuchi¹, Koki Nakane¹, Kazushi Inoue¹, Yui Aruga¹, Kazuhisa Sueoka¹, Eiji Hatta¹, Agus Subagyo¹ (1.Hokkaido Univ.)

[8p-PB3-16]Study on electrical properties of MoS2 fabricated by the sulfurization process

〇Yui Aruga¹, Koki Nakane¹, Taketo Kikuchi¹, Kazushi Inoue¹, Eiji Hatta¹, Kazushi Sueoka¹, Agus Subagyo¹ (1.Hokkaido Univ.)

[8p-PB3-17]Direct Growth of MoS₂Thin Films on ZrO_x Deposited by Mist CVD

〇Yuki Matsuoka¹, Abdul Kuddus^1,2, Keiji Ueno³, Hong En Lim³, Hajime Shirai⁴, Shinichiro Mouri¹ (1.Ritsumeikan Univ., 2.Ritsumeikan R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)

[8p-PB3-18]High-throughput automated characterization of graphene device arrays using imaging readout circuits

〇Shoichiro Fukushima¹, Masaaki Shimatani¹, Manabu Iwakawa¹, Shinpei Ogawa¹ (1.Mitsubishi Electric Corp.)

[8p-PB3-19]Microfabrication-Induced Mobility Improvement in Graphene Transferred by PVA and Laminator

〇(M2C)Koutarou Mitsuyasu¹, Satoshi Kitazaki¹, Yui Ogawa², Kyoichi Suzuki¹ (1.Fukuoka Inst. Tech., 2.Basic Res. Labs., NTT Inc.)

[8p-PB3-20]Numerical Analysis of Resonant Tunneling Transport in Graphene Nanoribbons with Double h-BN Barriers

〇Shoichi Sakamoto¹ (1.Seikei Univ.)

[8p-PB3-21]Electrical Impedance Tomography of Microscale Graphene Containing Circular Defects

〇(M1)Ryunosuke Kuwana¹, Yuki Kimura², Takashi Ikuno², Osamu Kubo¹ (1.Gifu Univ., 2.Tokyo Univ. of Sci.)

[8p-PB3-22]Development of a Process for Introducing Nanogaps into Graphite and Evaluation of SERS Properties

〇Yusei Terada¹, Vimal Kumar², Keiichi Yanagisawa², Fumitaka Sakamoto², Ryota Negishi^1,2 (1.TOYO Univ., 2.BN Research Center)

[8p-PB3-23]Spectroscopy of luminescent molecules scaffolded on two-dimensional materials for single-photon source applications

〇Shotaro Yotsuya¹, Kenji Watanabe¹, Takashi Taniguchi¹, Daichi Kozawa¹, Ryo Kitaura¹ (1.NIMS)

[8p-PB3-24]Characterization of crystallinity and transport properties of bulk SnS grown by chemical vapor deposition

〇Mahiro Sawada¹, Daiki Sekine^1,2, Noriko Matsui¹, Sota Yamamoto¹, Masako Suzuki-Sakamaki¹, Jun Ishihara¹, Makoto Kohda^1,2,3,4 (1.GSE, Tohoku Univ., 2.QUARC, QST, 3.AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ.)

[8p-PB3-25]Carrier Modulation of Semiconducting Transition Metal Dichalcogenides through Main Group Element Doping

〇(M1)Ayaka Wakabayashi¹, Shouhei Yamaguchi¹, Hong En Lim¹, Keiji Ueno¹ (1.Saitama Univ.)

[8p-PB3-26]Investigation of Etching of Molybdenum Disulfide Using M-Oxide

〇(M1)TOYOTAKA SHAMOTO¹, TAKUYA SUZUKI¹, DAISUKE KIRIYA¹ (1.The Univ. of Tokyo)

[8p-PB3-27]Temperature characteristics of exciton diffusion in monolayer WSe2

〇(M1)Toshiyuki Kobayashi¹, Idehara Wataru², Matuda Kazunari², Sakai Masaru¹ (1.Yamanashi Univ., 2.Kyoto Univ.)

[8p-PB3-28]Investigation of Carrier Transport in Polymer-Supported MoS₂ Field-Effect Transistors

〇PoHan Chen¹, Matej Sebek¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

[8p-PB3-29]Surface Morphology Evaluation of Amine Doped Monolayer MoS₂ Channel with Different Widths

〇(DC)Takashi Kobayashi¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

[8p-PB3-30]Material design of Cold Metal MOSFETs based on two-dimensional MoX₂ (X=S, Se, Te)

〇Yukie Kitaoka¹, Akiko Ueda¹, Hiroshi Imamura¹ (1.AIST)

[8p-PB3-31]Pressure-Induced Phase Transition of MoS₂ during Hydrothermal Synthesis

〇Ryunosuke Tange¹, Seiya Yokokura^1,2, Hiroki Waizumi^1,2, Tosihiro Shimada^1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)

[8p-PB3-32]Janusization of Layered InSe Bulk Single Crystals and Thin Films

〇(M1)Shun Muramatsu¹, Shouhei Yamaguchi¹, Hong En Lim¹, Keiji Ueno¹ (1.Saitama Univ.)

[8p-PB3-33]Photovoltaic properties of metal-semiconductor junctions using methylated germanane

〇Yoshiki Ejiri¹, Daichi Kato¹, Akira Nishino¹, Osamu Kubo¹ (1.Gifu Univ.)

[8p-PB3-34]Wavelength tunable hybrid metasurfaces using graphene and hBN

〇Manabu Iwakawa¹, Shoichirou Fukushima¹, Masaaki Shimatani¹, Shinpei Ogawa¹ (1.Mitsubishi Electric)

[8p-PB3-35]Photothermoelectric response in twisted bilayer graphene at the telecommunications wavelength

〇Junsei Ayusawa^1,2, Yuma Yoshinaga^1,2, Ikumo Itadani^1,2, Daichi Kozawa¹, Ryo Kitaura¹, Kenji Watanabe¹, Takashi Taniguchi¹, Satoshi Moriyama^1,2, Takuya Iwasaki¹ (1.NIMS, 2.Tokyo Denki Univ.)

[8p-PB3-36]Fundamental characteristics of selective etching on Ge surface assisted by vapor-phase reduced Graphene Oxide film

〇Keito Hashimoto¹, Naoki Kuwata¹, Kouji Inagaki¹, Kenta Arima¹ (1.U Osaka)

[8p-PB3-37]Evaluation of Cs Adsorption States and Photon Enhanced Thermionic Emission Characteristics on MoS₂ Surfaces with Different Layer Number

〇Rikiya Matsushima¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

[8p-PB3-38]Development of ReRAM based on VSe₂ incorporated with Ag

〇Ryota Nishinoue¹, Yuta Nakamura¹, Mitsuru Inada¹, Keiji Ueno², Mahito Yamamoto¹ (1.Kansai Univ., 2.Saitama Univ.)

[8p-PB3-39]Temperature Dependence of Nonlocal Voltage Arising from the Valley Hall Effect in Bilayer MoS₂

〇Takeru Kobayashi¹, Yusuke Nakamura¹, Yusuke Nakayama¹, Peter Kruger¹, David Ferry², Jonathan Bird^1,3, Nobuyuki Aoki¹ (1.Chiba Univ., 2.Arizona State Univ., 3.SUNY Buffalo)

[8p-PB3-40]Pulse Endurance Evaluation of Threshold Switching Devices based MoTe₂

〇Keisuke Kobayashi^1,2, Kentaro Uzawa^1,2, Ryoma Hayakawa², Takuya Iwasaki², Yutaka Wakayama^1,2, Satoshi Moriyama^1,2 (1.Tokyo Denki Univ., 2.NIMS)

English Presentation

[8p-PB3-41]Microfluidic platform enabled by atomically thin MoS₂ field effect transistor for sensitive dopamine detection.

〇Tsuyoshi Takaoka¹, Md Nasiruddin^1,2 (1.Tohoku Univ., 2.Rajshahi Univ.)

English Presentation

Session Details

[8p-PB3-1~46]17 Nanocarbon and Two-Dimensional Materials (Poster)

[8p-PB3-1]Effect of Hydrogen Flow Rate on Low-Temperature Graphene Formation using High-Power Pulsed Sputtering and Plasma CVD

[8p-PB3-2]Investigation of ohmic electrodes of transfer-free graphene on sapphire substrates formed via metal agglomeration technique.

[8p-PB3-3]Orientation dependence of ribbon-shaped graphene growth on sapphire substrates by CVD

[8p-PB3-4]DFT study of mechanism on remote epitaxial growth

[8p-PB3-5]Investigation of SnS nanoscale thin films and SnS/Al2S3/Al MIS structures by Electrostatic Spray Deposition (ESD)

[8p-PB3-6]Substrate orientation dependence of h-BN grown on sapphire by CVD

[8p-PB3-7]Direct Growth of Multilayer h-BN Films on α-Al2O3(0001) Substrates by CVD

[8p-PB3-8]Synthesis of hexagonal boron nitride multilayer thin films by chemical vapor deposition

[8p-PB3-9]Direct Growth of h-BN on Ferroelectric Substrates Using Permalloy Catalysts

[8p-PB3-10]Enhancing the uniformity of CVD-grown hBN using single-crystalline Fe-Ni foil

[8p-PB3-11]Selective Growth Behavior of MoS2 on HfO2/SiO2 Substrates

[8p-PB3-12]Growth of MoS2 Thin Films Using the Sol-Gel Method and Their Characterisation

[8p-PB3-13]Cooling-condition dependent phase formation during the transition from Mo6Te6 to MoTe2

[8p-PB3-14]Fabrication of Stacked MoS2/WS2 Heterostructure in Nanospace

[8p-PB3-15]Raman spectroscopy study on MoS2 film prepared by vacuum heating of MoO3 film immersed in sulfur liquid

[8p-PB3-16]Study on electrical properties of MoS2 fabricated by the sulfurization process

[8p-PB3-17]Direct Growth of MoS2 Thin Films on ZrOx Deposited by Mist CVD

[8p-PB3-18]High-throughput automated characterization of graphene device arrays using imaging readout circuits

[8p-PB3-19]Microfabrication-Induced Mobility Improvement in Graphene Transferred by PVA and Laminator

[8p-PB3-20]Numerical Analysis of Resonant Tunneling Transport in Graphene Nanoribbons with Double h-BN Barriers

[8p-PB3-21]Electrical Impedance Tomography of Microscale Graphene Containing Circular Defects

[8p-PB3-22]Development of a Process for Introducing Nanogaps into Graphite and Evaluation of SERS Properties

[8p-PB3-23]Spectroscopy of luminescent molecules scaffolded on two-dimensional materials for single-photon source applications

[8p-PB3-24]Characterization of crystallinity and transport properties of bulk SnS grown by chemical vapor deposition

[8p-PB3-25]Carrier Modulation of Semiconducting Transition Metal Dichalcogenides through Main Group Element Doping

[8p-PB3-26]Investigation of Etching of Molybdenum Disulfide Using M-Oxide

[8p-PB3-27]Temperature characteristics of exciton diffusion in monolayer WSe2

[8p-PB3-28]Investigation of Carrier Transport in Polymer-Supported MoS2 Field-Effect Transistors

[8p-PB3-29]Surface Morphology Evaluation of Amine Doped Monolayer MoS2 Channel with Different Widths

[8p-PB3-30]Material design of Cold Metal MOSFETs based on two-dimensional MoX2 (X=S, Se, Te)

[8p-PB3-31]Pressure-Induced Phase Transition of MoS2 during Hydrothermal Synthesis

[8p-PB3-32]Janusization of Layered InSe Bulk Single Crystals and Thin Films

[8p-PB3-33]Photovoltaic properties of metal-semiconductor junctions using methylated germanane

[8p-PB3-34]Wavelength tunable hybrid metasurfaces using graphene and hBN

[8p-PB3-35]Photothermoelectric response in twisted bilayer graphene at the telecommunications wavelength

[8p-PB3-36]Fundamental characteristics of selective etching on Ge surface assisted by vapor-phase reduced Graphene Oxide film

[8p-PB3-37]Evaluation of Cs Adsorption States and Photon Enhanced Thermionic Emission Characteristics on MoS2 Surfaces with Different Layer Number

[8p-PB3-38]Development of ReRAM based on VSe2 incorporated with Ag

[8p-PB3-39]Temperature Dependence of Nonlocal Voltage Arising from the Valley Hall Effect in Bilayer MoS2

[8p-PB3-40]Pulse Endurance Evaluation of Threshold Switching Devices based MoTe2

[8p-PB3-41]Microfluidic platform enabled by atomically thin MoS2 field effect transistor for sensitive dopamine detection.

[8p-PB3-42]Magnetotransport and Interfacial Properties of Dopant Molecule–2D Material Hybrids

[8p-PB3-43]Formations of Folded MoS2 Source/Drain for Low-Contacts Resistance MoS2 transistors

[8p-PB3-44]Observation of the electrical response of monosodium glutamate using MoS2 with a molecular template

[8p-PB3-45]Physical Reservoir Properties of Black Phosphorus Charge-Trap Memory

[8p-PB3-46]Electrochemically Intercalated Bulk WS2 Metasurfaces for Gate-Tunable Nanophotonics

[8p-PB3-5]Investigation of SnS nanoscale thin films and SnS/Al₂S₃/Al MIS structures by Electrostatic Spray Deposition (ESD)

[8p-PB3-7]Direct Growth of Multilayer h-BN Films on α-Al₂O₃(0001) Substrates by CVD

[8p-PB3-11]Selective Growth Behavior of MoS₂ on HfO₂/SiO₂ Substrates

[8p-PB3-12]Growth of MoS₂ Thin Films Using the Sol-Gel Method and Their Characterisation

[8p-PB3-13]Cooling-condition dependent phase formation during the transition from Mo₆Te₆ to MoTe₂

[8p-PB3-14]Fabrication of Stacked MoS₂/WS₂ Heterostructure in Nanospace

[8p-PB3-17]Direct Growth of MoS₂Thin Films on ZrO_x Deposited by Mist CVD

[8p-PB3-28]Investigation of Carrier Transport in Polymer-Supported MoS₂ Field-Effect Transistors

[8p-PB3-29]Surface Morphology Evaluation of Amine Doped Monolayer MoS₂ Channel with Different Widths

[8p-PB3-30]Material design of Cold Metal MOSFETs based on two-dimensional MoX₂ (X=S, Se, Te)

[8p-PB3-31]Pressure-Induced Phase Transition of MoS₂ during Hydrothermal Synthesis

[8p-PB3-37]Evaluation of Cs Adsorption States and Photon Enhanced Thermionic Emission Characteristics on MoS₂ Surfaces with Different Layer Number

[8p-PB3-38]Development of ReRAM based on VSe₂ incorporated with Ag

[8p-PB3-39]Temperature Dependence of Nonlocal Voltage Arising from the Valley Hall Effect in Bilayer MoS₂

[8p-PB3-40]Pulse Endurance Evaluation of Threshold Switching Devices based MoTe₂

[8p-PB3-41]Microfluidic platform enabled by atomically thin MoS₂ field effect transistor for sensitive dopamine detection.

[8p-PB3-43]Formations of Folded MoS₂ Source/Drain for Low-Contacts Resistance MoS₂ transistors

[8p-PB3-44]Observation of the electrical response of monosodium glutamate using MoS₂ with a molecular template