Presentation Information
[8p-PB3-14]Fabrication of Stacked MoS2/WS2 Heterostructure in Nanospace
〇(M1)Kosuke Yata1, Hayate Nakano1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
Keywords:
2D materials,transition metal dichalcogenide,interfacial growth
Although transition metal dichalcogenide (TMDC) heterostructures are expected to exhibit novel physical properties, thin film contamination and damage during device fabrication processes remain significant challenges. To address these issues, we attempted the direct synthesis of MoS2/WS2 heterostructures in the interfacial nanospace between the substrate and the electrode metal. In this study, W and Au thin films were sequentially deposited on a substrate, followed by chemical vapor deposition (CVD) using MoO3 under the sulfur atmosphere. Herein, we report the successful formation of a stacked MoS2 on WS2 structure beneath the Au thin film.