Presentation Information
[8p-PB3-16]Study on electrical properties of MoS2 fabricated by the sulfurization process
〇Yui Aruga1, Koki Nakane1, Taketo Kikuchi1, Kazushi Inoue1, Eiji Hatta1, Kazushi Sueoka1, Agus Subagyo1 (1.Hokkaido Univ.)
Keywords:
molybdenum disulfide,two-dimensional materials
This study fabricated TLM electrodes on MoS2 patterns to evaluate the electrical conduction properties of MoS2 formed by a direct sulfurization method via vacuum heating of a pre-formed sulfur film on a MoO3 film. As a result of measurements conducted using Ti as the source/drain electrodes and a Si substrate as the back-gate electrode, the current values were found to be small in most devices, except for a few that exhibited transistor characteristics. This is considered to be an issue arising from the large junction resistance with the Ti electrode.