Presentation Information
[8p-PB3-17]Direct Growth of MoS2 Thin Films on ZrOx Deposited by Mist CVD
〇Yuki Matsuoka1, Abdul Kuddus1,2, Keiji Ueno3, Hong En Lim3, Hajime Shirai4, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Ritsumeikan R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)
Keywords:
MoS2,High-k,CVD
Molybdenum disulfide (MoS2), a two-dimensional semiconductor, has attracted considerable attention for next-generation electronic devices. In this study, MoS2 was grown on a high-k dielectric layer and characterized by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements. XPS spectra confirmed the presence of Mo and S, indicating the formation of MoS2. In addition, a distinct PL peak at approximately 1.86 eV was observed after growth, whereas no significant emission peak was detected from the substrate before growth. These results demonstrate the successful formation of optically active MoS2 on the high-k dielectric layer.