Presentation Information
[8p-PB3-24]Characterization of crystallinity and transport properties of bulk SnS grown by chemical vapor deposition
〇Mahiro Sawada1, Daiki Sekine1,2, Noriko Matsui1, Sota Yamamoto1, Masako Suzuki-Sakamaki1, Jun Ishihara1, Makoto Kohda1,2,3,4 (1.GSE, Tohoku Univ., 2.QUARC, QST, 3.AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ.)
Keywords:
2D material,Chemical vapor deposition,Transport properties
Using bulk SnS grown by chemical vapor deposition (CVD), I fabricated four-terminal devices via microfabrication processes. From electrical measurements using both the two-terminal and van der Pauw methods, I evaluated the Ohmic contact state of the electrodes and the intrinsic resistivity of the crystal. Consequently, I investigated the impact of excellent crystallinity, including the suppression of grain boundary scattering and the enhancement of carrier mobility associated with CVD growth, on the electrical transport properties.
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